XingShi has established research and development cooperation with related high institutions. Annual R&D investment accounts for over 20% sales. And the company has been continued to carry on R&D of third generation SiC semiconductor new material and hyperpure ultra-hard SiC and so on. At the same time, XingShi has made much endeavor to abandon the traditionally widely used high energy & resource consumption and severe pollution production method, rather developed a resource saving, pollution free, high efficient, recycling and information-based production method.
Self Innovative and Leading in SiC Material Industry
XingShi specializes at producing new SiC materials. With many years R&D experience, XingShi has established whole new industry core ideas, and created new techniques, new manufacture procedures and new equipments in SiC refinement, smashing, granulating, fine grading, electro-chemical treatment and other production areas. XingShi has achieved quite a few intellectual property rights through independent R&D, and established its unique competitive strategy advantages.
Xingshi, the Origin of SiC Industry
Xingshi is China’s first high-tech enterprise engaged in SiC new material R&D and exportation, and has been leading in the profession front. The 6H－SiC produced in 2005 has the most stable crystallization shape among the known over 200 α-SiC, and has properties of high purity, high elasticity and crash-resistance. XingShi has provided the foundation product for SiC to further develop in ultra hard material and semiconductor in-depth advancement, and has also provided the possibility to further develop the 3rd generation semiconductor materials.
